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Absolute Maximum Ratings (T J = 25°C,
Converter Part
unless otherwise specified.)
Symbol
V i
V i(Surge)
V PN
V PN(Surge)
V CES
I C
I CP
P C
V RRM
I FSM
T J
Item
Supply Voltage
Supply Voltage (Surge)
Output Voltage
Output Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Repititive Peak Reverse Voltage
Peak Forward Surge Current
Operating Junction Temperature
Condition
Applied between R - S
Applied between R - S
Applied between P - N
Applied between P - N
T C = 25°C, T J < 150°C
T C = 25°C, T J < 150°C, Under 1ms Pulse Width
T C = 25°C
Single Half Sine-Wave
Rating
264
500
450
500
600
30
60
104
600
350
-40 ~ 150
Unit
V rms
V
V
V
V
A
A
W
V
A
°C
Control Part
Symbol
V CC
V IN
V FO
I FO
V SC
Item
Control Supply Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
Condition
Applied between V CC - COM
Applied between IN - COM
Applied between V FO - COM
Sink Current at V FO Pin
Applied between C SC - COM
Rating
20
-0.3 ~ V CC +0.3
-0.3 ~ V CC +0.3
5
-0.3 ~ V CC +0.3
Unit
V
V
V
mA
V
Total System
Symbol
T STG
V ISO
Item
Storage Temperature
Isolation Voltage
Condition
60 Hz, Sinusoidal, AC 1 Minute, Connect Pins
Rating
-40 ~ 125
2500
Unit
°C
V rms
to Heat Sink Plate
Thermal Resistance
Symbol
R ? (j-c)Q
R ? (j-c)F
R ? (j-c)R
Item
Junction to Case Thermal Resistance
Condition
IGBT
FRD
Rectifier (per 1 / 4 module)
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
1.4
1.7
Unit
°C/W
°C/W
°C/W
?2010 Fairchild Semiconductor Corporation
FPAB30BH60B Rev. C4
4
www.fairchildsemi.com
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